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Homepage>BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Test method for bias temperature instability
sklademVydáno: 2022-10-05
BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Test method for bias temperature instability

BS IEC 63275-1:2022

Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Test method for bias temperature instability

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Označení normy:BS IEC 63275-1:2022
Počet stran:16
Vydáno:2022-10-05
ISBN:978 0 539 12126 1
Status:Standard
Počet stran (Anglicky):16
ISBN (Anglicky):978 0 539 12126 1
DESCRIPTION

BS IEC 63275-1:2022


This standard BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors is classified in these ICS categories:
  • 31.080.30 Transistors