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>BS IEC 63601:2026 Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion
sklademVydáno: 2026-02-10
BS IEC 63601:2026 Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion

BS IEC 63601:2026

Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion

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Označení normy:BS IEC 63601:2026
Počet stran:50
Vydáno:2026-02-10
ISBN:978 0 539 33085 4
Status:Standard
DESCRIPTION

BS IEC 63601:2026


This standard BS IEC 63601:2026 Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion is classified in these ICS categories:
  • 31.080.99 Other semiconductor devices
  • 31.080.30 Transistors

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