PRICES include / exclude VAT
sklademVydáno: 2019-01-30
IEC 63068-2:2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
Format
Availability
Price and currency
Anglicky Hardcopy
skladem
187.85 €
Anglicky PDF
Immediate download
Printable
187.85 €
| Označení normy: | IEC 63068-2:2019 |
| Vydáno: | 2019-01-30 |
| Edice: | 1 |
| ICS: | 31.080.99 |
| Počet stran (Anglicky): | 25 |
| ISBN (Anglicky): | 9782832264805 |
DESCRIPTION
IEC 63068-2:2019
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.