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sklademVydáno: 2022-04-21
IEC 63284:2022
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
Dispositifs à semiconducteurs - Méthode d’essai de fiabilité par la commutation sur charge inductive pour les transistors au nitrure de gallium
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| Označení normy: | IEC 63284:2022 |
| Vydáno: | 2022-04-21 |
| Edice: | 1 |
| ICS: | 31.080.30 |
DESCRIPTION
IEC 63284:2022
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress