IEC TS 62607-6-27:2025

IEC TS 62607-6-27:2025, which is a Technical Specification, establishes a standardized method to determine the key control characteristic
• field-effect mobility
for semiconducting two-dimensional (2D) materials by the
• field-effect transistor (FET) method.
For two-dimensional semiconducting materials, the field-effect mobility is determined by fabricating a FET test structure and measuring the transconductance in a four-terminal configuration.
- This method can be applied to layers of semiconducting two-dimensional materials, such as graphene, black phosphorus (BP), molybdenum disulfide (MoS₂), molybdenum ditelluride (MoTe₂), tungsten disulfide (WS₂), and tungsten diselenide (WSe₂).
- The four-terminal configuration improves accuracy by eliminating parasitic effects from the probe contacts and cables