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>UNE EN IEC 60749-23:2026 - Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (Endorsed by Asociación Española de Normalización in March of 2026.)
sklademVydáno: 2026-03-01
UNE EN IEC 60749-23:2026 - Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (Endorsed by Asociación Española de Normalización in March of 2026.)

UNE EN IEC 60749-23:2026

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (Endorsed by Asociación Española de Normalización in March of 2026.)

Dispositivos semiconductores. Métodos de ensayo mecánicos y climáticos. Parte 23: Vida de funcionamiento a alta temperatura. (Ratificada por la Asociación Española de Normalización en marzo de 2026.)

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Označení normy:UNE EN IEC 60749-23:2026
Počet stran:17
Vydáno:2026-03-01
Status:Norma
DESCRIPTION

UNE EN IEC 60749-23:2026

This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as burn-in , may be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this standard.

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