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Main page>20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 2. Test method for bipolar degradation by body diode operating
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sklademVydáno: 2020-04-01
20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 2. Test method for bipolar degradation by body diode operating

20/30406234 DC

BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 2. Test method for bipolar degradation by body diode operating

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25.66 €
Označení normy:20/30406234 DC
Počet stran:11
Vydáno:2020-04-01
Status:Draft for Comment
DESCRIPTION

20/30406234 DC


This standard 20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors is classified in these ICS categories:
  • 31.080.01 Semiconductor devices in general
  • 31.080.99 Other semiconductor devices
  • 31.080.30 Transistors

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