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Homepage>BSI Standards>31 ELEKTRONIKA>31.080 Polovodičové součástky>31.080.30 Tranzistory

31.080.30 Tranzistory

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20 results
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BS EN 120004:1993
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated photocouplers with phototransistor output
Vydáno: 1988-05-15
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17/30366375 DC
BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) Part 1. Fast BTI Test method
Vydáno: 2017-11-30
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BS IEC 60747-8-4:2004
Discrete semiconductor devices Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
Vydáno: 2004-11-09
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BS EN 120003:1993
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
Vydáno: 1986-11-15
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BS IEC 60747-7:2010+A1:2019
Semiconductor devices. Discrete devices Bipolar transistors
Vydáno: 2019-10-23
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BS QC 750106:1993
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications
Vydáno: 1993-07-15
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BS IEC 62899-503-3:2021
Printed electronics Quality assessment. Measuring method of contact resistance for the printed thin film transistor. Transfer length method
Vydáno: 2021-09-08
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BS IEC 62899-503-1:2020
Printed electronics Quality assessment. Test method of displacement current measurement for printed thin-film transistor
Vydáno: 2020-09-25
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BS IEC 63275-1:2022
Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Test method for bias temperature instability
Vydáno: 2022-10-05
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BS EN 62416:2010
Semiconductor devices. Hot carrier test on MOS transistors
Vydáno: 2010-07-31
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18/30381548 DC
BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) Part 1. Fast BTI Test method
Vydáno: 2018-08-03
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BS IEC 60747-9:2019
Semiconductor devices Discrete devices. Insulated-gate bipolar transistors (IGBTs)
Vydáno: 2019-11-22
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1Last page