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Main page>UNE EN 150012:1991 BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.)
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sklademVydáno: 1996-11-01
UNE EN 150012:1991 BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.)

UNE EN 150012:1991

BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.)

Especificación marco de detalle: Transistor de efecto de campo (FET) de puerta simple. (Ratificada por AENOR en noviembre de 1996.)

CURRENCY
111.1 €
Označení normy:UNE EN 150012:1991
Počet stran:65
Vydáno:1996-11-01
DESCRIPTION

This standard UNE EN 150012:1991 BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.) is classified in these ICS categories:

  • 31.080.30
Categories:
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