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Main page>19/30404655 DC BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate
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sklademVydáno: 2019-10-17
19/30404655 DC BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate

19/30404655 DC

BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate

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24.01 €
Označení normy:19/30404655 DC
Počet stran:23
Vydáno:2019-10-17
Status:Draft for Comment
DESCRIPTION

19/30404655 DC


This standard 19/30404655 DC BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate is classified in these ICS categories:
  • 31.080.01 Semiconductor devices in general
  • 31.080.99 Other semiconductor devices

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