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Main page>20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 1. Test method for bias temperature instability
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sklademVydáno: 2020-04-01
20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 1. Test method for bias temperature instability

20/30406230 DC

BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 1. Test method for bias temperature instability

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23.18 €
Označení normy:20/30406230 DC
Počet stran:11
Vydáno:2020-04-01
Status:Draft for Comment
DESCRIPTION

20/30406230 DC


This standard 20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors is classified in these ICS categories:
  • 31.080 Semiconductor devices
  • 31.080.01 Semiconductor devices in general
  • 31.080.30 Transistors