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sklademVydáno: 2020-04-01
20/30406230 DC
BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 1. Test method for bias temperature instability
Měna
| Označení normy: | 20/30406230 DC |
| Počet stran: | 11 |
| Vydáno: | 2020-04-01 |
| Status: | Draft for Comment |
Popis
20/30406230 DC
This standard 20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors is classified in these ICS categories:
- 31.080 Semiconductor devices
- 31.080.01 Semiconductor devices in general
- 31.080.30 Transistors