BS IEC 63068-1:2019

This standard BS IEC 63068-1:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices is classified in these ICS categories:

• 31.080.99 Other semiconductor devices

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.