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sklademVydáno: 2009-05-31
BS ISO 23812:2009
Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials
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| Označení normy: | BS ISO 23812:2009 | 
| Počet stran: | 30 | 
| Vydáno: | 2009-05-31 | 
| ISBN: | 978 0 580 55765 1 | 
| Status: | Standard | 
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BS ISO 23812:2009
This standard BS ISO 23812:2009 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials is classified in these ICS categories:
- 71.040.40 Chemical analysis
 
1.1
This International Standard specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
1.2 This International Standard is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
1.3 This International Standard is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
