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Hlavní stránka>IEC 60747-8:2010 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
sklademVydáno: 2010-12-15
IEC 60747-8:2010 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

IEC 60747-8:2010

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

Dispositifs à semiconducteurs - Dispositifs descrets - Partie 8: Transistors à effet de champ

Formát
Dostupnost
Cena a měna
Anglicky/Francouzsky Tisk
skladem
10439 Kč
Anglicky/Francouzsky PDF
K okamžitému stažení
10439 Kč
Označení normy:IEC 60747-8:2010
Vydáno:2010-12-15
Edice:3
ICS:31.080.30
Počet stran (Anglicky/Francouzsky):155
ISBN (Anglicky/Francouzsky):9782889122790
Popis

IEC 60747-8:2010

IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.

This publication is to be read in conjunction with IEC 60747-1:2006.