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sklademVydáno: 2019-01-30
IEC 63068-1:2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
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Označení normy: | IEC 63068-1:2019 |
Vydáno: | 2019-01-30 |
Edice: | 1 |
ICS: | 31.080.99 |
Počet stran (Anglicky): | 23 |
ISBN (Anglicky): | 9782832264799 |
Popis
IEC 63068-1:2019
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.