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sklademVydáno: 2009
ISO 23812:2009
ISO 23812:2009-Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
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| Označení normy: | ISO 23812:2009 |
| Počet stran: | 19 |
| Vydání: | 1 |
| Vydáno: | 2009 |
Popis
ISO 23812:2009
ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials. It is not applicable to the surface-transient region where the sputtering rate is not in the steady state. It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.