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>UNE EN 62047-25:2016 - Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area (Endorsed by Asociación Española de Normalización in January of 2017.)
sklademVydáno: 2017-01-01
UNE EN 62047-25:2016 - Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area (Endorsed by Asociación Española de Normalización in January of 2017.)

UNE EN 62047-25:2016

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area (Endorsed by Asociación Española de Normalización in January of 2017.)

Dispositivos semiconductores. Dispositivos microelectromecánicos. Parte 25: Tecnología de fabricación de MEMS basados en silicio. Método de medida de la resistencia al cizallamiento y al desprendimiento del área de micro unión. (Ratificada por la Asociación Española de Normalización en enero de 2017.)

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Označení normy:UNE EN 62047-25:2016
Počet stran:31
Vydáno:2017-01-01
Status:Norma
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UNE EN 62047-25:2016

This part of IEC 62047 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro- electromechanical system (MEMS). This part of IEC 62047 is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology. Micro anchor, fixed on the substrate through the micro bonding area, provides mechanical support of the movable sensing/actuating functional components in MEMS devices. With the devices scaling, the bonding strength degradation, induced by defects, contaminations and thermal mismatch stress on bonding surface, becomes severer. Considering that the in-situ testing method for measuring the bonding strength of this microscale anchor should be simple and convenient to be realized, this standard specifies an in-situ testing method of the pull-press and shearing strength based on a patterned technique. This standard does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and to prepare the test specimen specially. Since the testing structure in this standard can be implanted in device fabrication as a standard detection pattern, this standard can provide a bridge, by which the fabrication foundry can give some quantitative reference for the designer.

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