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>UNE EN 62047-26:2016 - Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures (Endorsed by AENOR in June of 2016.)
sklademVydáno: 2016-06-01
UNE EN 62047-26:2016 - Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures (Endorsed by AENOR in June of 2016.)

UNE EN 62047-26:2016

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures (Endorsed by AENOR in June of 2016.)

Dispositivos semiconductores. Dispositivos microelectromecánicos. Parte 26: Descripción y métodos de medición para microsurcos y estructuras de agujas (Ratificada por AENOR en junio de 2016.)

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Označení normy:UNE EN 62047-26:2016
Počet stran:35
Vydáno:2016-06-01
Status:Norma
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UNE EN 62047-26:2016

This part of IEC 62047 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 ¼m to 100 ¼m; walls and trenches with respective widths of 5 ¼m to 150 ¼m; and aspect ratio of 0,0067 to 20. For needle structures, the standard applies to structures with a height, horizontal width and vertical width of 2 ¼m or larger, and with dimensions that fit inside a cube with sides of 100 ¼m. This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.

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